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| Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features * Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz * High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT diate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41485 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 85 Plastic Package Description Hewlett-Packard's AT-41485 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41485 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an interme- 5965-8926E 4-124 AT-41485 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 60 500 150 -65 to 150 Thermal Resistance [2,4]: jc = 155C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.5 mW/C for TC > 73C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 25 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. Typ. Max. 17.5 11.5 18.5 14.0 1.4 1.7 3.0 18.5 13.5 9.5 8.0 30 150 270 0.2 1.0 1.8 GA Gain @ NFO; VCE = 8 V, IC = 10 mA dB 17.5 fT hFE ICBO IEBO CCB Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz GHz -- A A pF 0.25 Notes: 1. For this test, the emitter is grounded. 4-125 AT-41485 Typical Performance, TA = 25C 24 21 18 GAIN (dB) 15 12 9 6 NF50 GA 24 P1 dB (dBm) 16 15 20 2.0 GHz 4.0 GHz 14 GAIN (dB) 13 12 GA 10 V 6V 4V 16 8 6 G1 dB (dB) NF (dB) 4 NFO P1dB 2.0 GHz 12 4.0 GHz 4 4V 6V 10 V NFO 3 2 1 8 G1dB 3 0 0.5 1.0 2.0 2 0 3.0 4.0 5.0 4 0 10 20 30 40 0 10 20 30 40 FREQUENCY (GHz) IC (mA) IC (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 16 14 12 GAIN (dB) GAIN (dB) 10 8 GA 4.0 GHz 2.0 GHz 40 35 30 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) MAG |S21E|2 20 1.0 GHz 16 |S21E|2 GAIN (dB) MSG 12 2.0 GHz 4 NFO 2.0 GHz NFO (dB) 4.0 GHz 6 8 4.0 GHz 4 2 0 10 20 30 40 0 0 0 10 20 30 40 IC (mA) IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 4-126 NFO (dB) AT-41485 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VCE = 8 V, IC Freq. S11 GHz Mag. Ang. 0.1 .74 -40 0.5 .61 -126 1.0 .57 -161 1.5 .57 -180 2.0 .58 166 2.5 .59 160 3.0 .61 150 3.5 .62 142 4.0 .62 134 4.5 .62 125 5.0 .63 115 5.5 .65 103 6.0 .69 92 = 10 mA dB 28.2 21.9 16.6 13.4 11.0 9.3 7.7 6.4 5.3 4.3 3.5 2.7 1.8 S21 Mag. 25.80 12.46 6.80 4.67 3.55 2.92 2.42 2.09 1.84 1.65 1.50 1.37 1.24 Ang. 156 108 87 75 64 59 50 41 32 24 15 6 -4 dB -35.6 -29.2 -27.9 -25.7 -24.5 -23.3 -21.9 -20.8 -19.5 -18.4 -17.2 -16.1 -15.3 S12 Mag. .017 .035 .040 .052 .060 .068 .080 .091 .106 .120 .138 .157 .172 S22 Ang. 81 44 38 47 54 58 63 61 59 57 54 49 46 Mag. .93 .57 .46 .43 .41 .40 .39 .41 .42 .43 .44 .43 .40 Ang. -14 -31 -33 -34 -38 -39 -46 -54 -62 -67 -73 -78 -86 AT-41485 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VCE = 8 V, IC Freq. S11 GHz Mag. Ang. 0.1 .55 -68 0.5 .58 -153 1.0 .58 -177 1.5 .58 169 2.0 .60 158 2.5 .60 153 3.0 .63 147 3.5 .64 140 4.0 .64 133 4.5 .64 125 5.0 .64 115 5.5 .66 105 6.0 .70 94 = 25 mA dB 32.0 23.1 17.4 14.0 11.6 9.8 8.1 6.9 5.8 4.8 4.0 3.2 2.4 S21 Mag. 40.01 14.20 7.39 5.01 3.78 3.09 2.55 2.21 1.94 1.74 1.58 1.45 1.32 Ang. 146 99 82 71 61 58 48 39 31 23 14 5 -5 dB -40.9 -32.7 -29.8 -27.3 -24.6 -23.7 -21.7 -20.7 -19.4 -18.1 -17.1 -15.9 -15.1 S12 Mag. .009 .023 .032 .043 .059 .065 .082 .092 .107 .125 .140 .160 .175 S22 Ang. 57 52 63 60 64 71 68 67 65 63 56 50 47 Mag. .85 .47 .41 .39 .38 .36 .35 .37 .39 .40 .41 .40 .37 Ang. -19 -29 -28 -30 -36 -39 -47 -56 -64 -71 -78 -82 -91 A model for this device is available in the DEVICE MODELS section. AT-41485 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.3 1.3 1.4 1.7 3.0 opt Mag .12 .10 .06 .25 .48 Ang 5 25 50 172 -131 RN/50 0.17 0.17 0.16 0.16 0.24 4-127 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 0.015 3.63 0.38 414 45 1 BASE 3 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 EMITTER .085 2.15 2 .060 .010 1.52 .25 5 TYP. .006 .002 .15 .05 .07 0.43 .286 .030 7.36 .76 4-128 |
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